Effect of liner oxide densification on stress-induced leakage current characteristics in shallow trench isolation processing

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Park, Jeong Hwan ^a   Shin, Seung Woo ^a   Park, Sang Wook ^a   Kong, Young Taek ^a   Kim, Dong Jin ^a   Suh, Min Suk ^a   Lee, Seung Cheol ^a   Kwak, Noh Yeal ^a   Dong, Cha Deok ^a   Kim, Do Woo ^a   Lee, Geun Il ^a   Kwon, Oh Jung ^a   Yang, Hong Seon ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CRYSTAL DEFECTS; DENSIFICATION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; PLASMA DENSITY; RANDOM ACCESS STORAGE;

LINER OXIDE DENSIFICATION; MECHANICAL STRESS; SHALLOW TRENCH ISOLATION PROCESSING; STRESS INDUCED LEAKAGE CURRENT CHARACTERISTICS;

OXIDES;

EID: 0038445630     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1575740     Document Type: Article

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