Easily manufacturable shallow trench isolation for gigabit dynamic random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 A, 1996, Pages 4618-4623

  Roh, Byung Hyug ^a   Cho, Yun Hee ^a   Shin, Yu Gyun ^a   Hong, Chang Gi ^a   Gwun, Sang Dong ^a   Lee, Kang Yun ^a   Kang, Ho Gyu ^a   Kim, Ki Nam ^a   Park, Jong Woo ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

DRAM; Easily; Gigabit; Manufacturable; Shallow trench isolation

Indexed keywords

OXIDE INSULATION;

DRY ETCHING; ELECTRIC INSULATION; ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT MANUFACTURE; ETCHING; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR STORAGE;

DATA STORAGE EQUIPMENT;

EID: 0030232371     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4618     Document Type: Article

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