Shallow trench isolation characteristics with high-density-plasma chemical vapor deposition gap-fill oxide for deep-submicron CMOS technologies

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1222-1227

  Lee, Seung Ho ^a   Son, Jeong Hwan ^a   Lee, Hi Deok ^a   Yang, Wouns ^a   Lee, Young Jong ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Chemical mechanical polishing; Diode leakage current; High density plasma oxide; Shallow trench isolation

Indexed keywords

EID: 0009752195     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1222     Document Type: Article

References (7)

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