Chemical bond structure of a-C:F films with a low dielectric constant deposited by using CH4/CF4 ICPCVD

Journal of the Korean Physical Society

Volumn 42, Issue 5, 2003, Pages 676-681

  Kang, Gwon Sarm ^a   Ko, Ho Jeong ^a   Choi, Chi Kyu ^a   Chang, Choong Seok ^b  

^a Jeju National University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

a C:F films; Bonding structure; Dielectric constant; ICPCVD; Low k materials

Indexed keywords

EID: 0038407594     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (22)

1. T. Homma, T. Kutsuzawa, K. Kunimune and Y. Murao, Thin Solid Films 235, 80 (1993).
2. Y. Ma, H. Yang, J. Guo, C. Sathe, A. Agui and J. Nordgren, Appl. Phys. Lett. 72, 3353 (1998).
3. S. Y. Jing, H. J. Lee and C. K. Choi, J. Korean Phys. Soc. 41, 769 (2002).
4. Y. H. Kim, H. J. Kim, J. Y. Kim and Y. Lee, J. Korean Phys. Soc. 40, 94 (2002).
5. S. Takeishi, H. Kudoh, R. Shinohara, A. Tsukune, Y. Sato, H. Miyazawa, H. Harada and M. Yamada, J. Electrochem. Soc. 143, 381 (1996).
6. S. H. Yang, S. H. Lee, J. W. Park, S. S. Sohn, J. W. Park and J. Y. Kim, J. Korean Phys. Soc. 35, S361 (1999).
7. K. Endo and T. Tatsumi, Appl. Phys. Lett. 68, 2864 (1996).
8. H. Yang, D. J. Tweet, Y. Ma and T. Nguyen, Appl. Phys. Lett. 73, 1514 (1998).
9. K. S. Oh, S. Y. Jing, C. K. Choi, K. M. Lee and H. J. Lee, J. Korean Phys. Soc. 39, 291 (2001).
10. S. M. Yun, H. Y. Chang, K. M. Lee, D. C. Kim and C. K. Choi, J. Electrochem. Soc. 145, 2578 (1998).
11. C. B. Labell and K. K. Gleason, J Electrochem. Soc. 147, 678 (2000).
12. G. Socrates, Infrared and Raman Characteristic Group Frequencies (John Wiley & Sons, New York, 2001), p. 199.
13. N. Sen and M. F. Thrope, Phys. Rev. B 15, 4030 (1997).
14. G. Lucovsky, Philos. Mag. B 39, 513 (1979).
15. S. Agraharam, D. W. Hess, P. A. Kohl and S. A. B. Allen, J. Electrchem. Soc. 147, 2665 (2000).
16. S. Takeishi, H. Kudo, R. Shinohra, M. Hashino, S. Fukuyama, J. Yamakuchi and M. Yamada, J. Electrochem. Soc. 143, 1797 (1997).
17. R. D'Agostino, R. Lamendola, P. Favia and A. Giquel, J. Vac. Sci. Technol. A 12, 308 (1994).
18. K. Endo, MRS Bulletin 22, 55 (1997).
19. M. Horie, J. Vac. Sci. Technol. A13. 2490 (1995).
20. J. W. Yi, Y. H. Lee and B. Farouk, Thin Solid Films 374, 103 (2000).
21. M. E. H. Maia da Costa, F. L. Freire Jr, L. G. Jacobsohn, D. Franceschini, G. Mariotto and I. R. J. Baumvol, Diamond and Related Materials 10, 910 (2001).
22. S. S. Han, H. R. Kim and B. S. Bae, J. Electrochem. Soc. 416, 3383 (1999).