Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition

Solid State Sciences

Volumn 5, Issue 4, 2003, Pages 587-589

  Takahashi, Naoyuki ^a   Takekawa, Masahisa ^a   Takahashi, Tadashi ^a,b   Nakamura, Takato ^a   Yoshioka, Masayuki ^c   Inami, Wataru ^a   Kawata, Yoshimasa ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SUZUKI MOTOR CORPORATION   (Japan)

^c Shizuoka Industrial Research Institute of Shizuoka Prefecture   (Japan)

Author keywords

AP HCVD; Hump; Optical recording; Tin nitride; Sn

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; LASER ABLATION; LIGHT REFLECTION; OPTICAL RECORDING; QUARTZ; THIN FILMS;

LIGHT IRRADIATION;

TIN COMPOUNDS;

HALIDE; NITRIC ACID DERIVATIVE; SILICON DIOXIDE; TIN; TIN NITRIDE; UNCLASSIFIED DRUG;

ARTICLE; ATMOSPHERIC PRESSURE; ATOMIC FORCE MICROSCOPY; DECOMPOSITION; FILM; LIGHT; OPTICS; SYNTHESIS; VAPOR; YAG LASER;

EID: 0038287490     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1293-2558(03)00051-7     Document Type: Article

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