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Volumn 150, Issue 3, 2003, Pages 253-258

Strained InAsN/InGaAs/InP multiple quantum well structures grown by RF-plasma assisted GSMBE for mid-infrared laser applications

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0038148552     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030389     Document Type: Article
Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.