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Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 481-484

Transmission electron microscopy investigation of InNAs on GaAs grown by molecular beam epitaxy

(5) Hao, M a Sakai, S a Sugahara, T a Cheng, T S b Foxon, C T b

a UNIVERSITY OF TOKUSHIMA (Japan)

b UNIVERSITY OF NOTTINGHAM (United Kingdom)

Author keywords

EDX; InNAs films; Phases separation; TEM; XRD

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ENERGY DISPERSIVE X RAY SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0032092809 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00335-2 Document Type: Article

Times cited : (8)

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