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Volumn 220, Issue 4-5, 1996, Pages 224-230

Theoretical studies on hydroxylation mechanism of H-terminated Si surface in aqueous solutions

Author keywords

Ab initio molecular orbital theory; Aqueous solution; H terminated Si surface; Hydroxylation; Quantum chemistry; Surface reaction

Indexed keywords

CHEMICAL BONDS; HYDROXYLATION; MOLECULAR ORBITALS; QUANTUM CHEMISTRY; SILICON; SILICON COMPOUNDS; SOLUTIONS; SURFACE REACTIONS;

EID: 0042124868     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/0375-9601(96)00527-0     Document Type: Article
Times cited : (9)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.