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Volumn 220, Issue 4-5, 1996, Pages 224-230
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Theoretical studies on hydroxylation mechanism of H-terminated Si surface in aqueous solutions
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Author keywords
Ab initio molecular orbital theory; Aqueous solution; H terminated Si surface; Hydroxylation; Quantum chemistry; Surface reaction
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Indexed keywords
CHEMICAL BONDS;
HYDROXYLATION;
MOLECULAR ORBITALS;
QUANTUM CHEMISTRY;
SILICON;
SILICON COMPOUNDS;
SOLUTIONS;
SURFACE REACTIONS;
AB INITIO MOLECULAR ORBITAL THEORY;
BOND CLEAVAGES;
H-TERMINATED SI SURFACES;
HIGH REACTIVITY;
QUANTUM CHEMICAL APPROACH;
REACTION PATHWAYS;
SURFACE HYDROXYLATIONS;
THEORETICAL STUDY;
FLUORINE COMPOUNDS;
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EID: 0042124868
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/0375-9601(96)00527-0 Document Type: Article |
Times cited : (9)
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References (24)
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