Dependence of electron energy distributions on discharge pressure in ultrahigh-frequency and inductive-coupled Cl2 plasmas

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7646-7649

  Samukawa, Seiji ^a   Tsukada, Tsutomu ^b  

^a NEC CORPORATION   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

Author keywords

Electron collision frequency; Etching selectivity; Inductive coupled plasma; Ion current density; Ion energy; Process window; Ultrahigh frequency plasma

Indexed keywords

CURRENT DENSITY; ELECTRON ENERGY LEVELS; ETCHING; IONIZATION OF SOLIDS;

ELECTRON COLLISION FREQUENCY; INDUCTIVE COUPLED PLASMAS; ION ENERGY; PROCESS WINDOWS; ULTRAHIGH FREQUENCY PLASMAS;

SEMICONDUCTOR PLASMAS;

EID: 0031346545     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7646     Document Type: Article

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