SCOPUS 정보 검색 플랫폼

International Journal of Modern Physics B

Volumn 16, Issue 1-2, 2002, Pages 189-196

Effect of underlayers on the stress of Cu films prepared using ionized metal plasma

(7) Li, C Y a Zhang, D H b Wu, J J a Qi, D X c Qian, Y a Li, W H a Foo, P D a

a INSTITUTE OF MICROELECTRONICS (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

c CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER DERIVATIVE; METAL; NITROGEN; TANTALUM;

CHEMICAL COMPOSITION; CONFERENCE PAPER; FILM; HIGH TEMPERATURE PROCEDURES; IONIZATION; METAL BINDING; NITROGEN AVAILABILITY; STRESS; STRESS STRAIN RELATIONSHIP; TEMPERATURE SENSITIVITY; TENSILE STRENGTH;

EID: 0037138051 PISSN: 02179792 EISSN: None Source Type: Journal
DOI: 10.1142/s0217979202009639 Document Type: Conference Paper

Times cited : (9)

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