III-V nitrides: A new age for optoelectronics

MRS Bulletin

Volumn 28, Issue 5, 2003, Pages

  Hangleiter, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Aluminum nitride (AlN); Gallium nitride (GaN); III V nitrides; Indium nitride (InN); Laser diodes; Light emitting diodes (LEDs); Optical communications; Optoelectronics; Photonic materials

Indexed keywords

LASER APPLICATIONS; NITRIDES; OPTICAL COMMUNICATION; SEMICONDUCTOR LASERS;

PHOTONIC MATERIALS;

LIGHT EMITTING DIODES;

EID: 0037902166     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2003.99     Document Type: Article

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