Ion energy, ion flux, and ion mass effects on low-temperature silicon epitaxy using low-energy ion bombardment process

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2347-2351

  Shindo, Wataru ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000128946     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361161     Document Type: Article

References (16)

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