Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

Applied Surface Science

Volumn 159, Issue , 2000, Pages 30-34

  Kitagawa, Toshihisa ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLOW DISCHARGES; HYDROGEN; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SILANES; THERMAL EFFECTS; THERMAL STRESS;

HYDROGEN TERMINATION; LOW TEMPERATURE EPITAXY (LTE);

SEMICONDUCTING SILICON;

EID: 0034205691     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00081-7     Document Type: Article

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