Dry-etch damage and its recovery in InGaN/GaN multi-quantum-well light-emitting diodes

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 530-534

  Lee, Ji Myon ^a   Huh, Chul ^d   Kim, Dong Joon ^b   Park, Seong Ju ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRY ETCHING; ELECTROLUMINESCENCE; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ETCH-INDUCED DAMAGE;

LIGHT EMITTING DIODES;

EID: 0037832788     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/323     Document Type: Article

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