Reactive ion etching of III-V nitrides

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 159-163

  Pearton, S J ^a   Shul, R J ^b   McLane, G F ^c   Constantine, C ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d Plasmatherm   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BOND STRENGTH (CHEMICAL); ELECTRON CYCLOTRON RESONANCE; MAGNETRONS; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM NITRIDES (ALN); GALLIUM NITRIDES (GAN); INDIUM NITRIDES (INN);

NITRIDES;

EID: 0031076930     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00158-x     Document Type: Article

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