A study of reactive ion etching damage effects in GaN

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 585-591

  Rong, B ^a,b   Reeves, R J ^a   Brown, S A ^a   Alkaisi, M M ^a   Van Der Drift, E ^b   Cheung, R ^c   Sloof, W G ^b  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Dry etch; GaN; Reactive ion etching

Indexed keywords

ANNEALING; DRY ETCHING; EXCITONS; PHOTOLUMINESCENCE; PLASMAS; REACTIVE ION ETCHING; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

LANGMUIR PROBES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035450887     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00489-0     Document Type: Article

References (19)