Mechanism of nitrogen removal from silicon nitride by nitric oxide

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 2, 1999, Pages 665-667

  Blain, M G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

CHEMICAL REACTIONS; ELECTRIC DISCHARGES; ETCHING; NITRIC OXIDE; PLASMA; SILICON NITRIDES; THIN FILMS

Indexed keywords

EID: 84984998344     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.582028     Document Type: Article

References (5)

1. M. G. Blain, T. L. Meisenheimer, and J. E. Stevens, J. Vac. Sci. Technol. A JVTAD6 14, 2151 (1996).
2. Y. Wang and L. Luo, J. Vac. Sci. Technol. A JVTAD6 16, 1582 (1998).
3. B. E. E. Kastenmeier, P. J. Matsuo, and G. S. Oehrlein, J. Vac. Sci. Technol. A JVTAD6 16, 2047 (1998).
4. J. J. Beulens, B. E. E. Kastenmeier, P. J. Matsuo, and G. S. Oehrlein, Appl. Phys. Lett. APPLAB 66, 2634 (1996).
5. M. G. Blain, R. L. Jarecki, and R. J. Simonson, J. Vac. Sci. Technol. A JVTAD6 16, 2115 (1998).