Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 1, 2001, Pages 25-30

  Kastenmeier, B E E ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ETCHING; FLUORINE; MASS SPECTROMETRY; NITROGEN OXIDES; OXIDATION; PLASMAS; SURFACES;

NITRIC OXIDE; NITROGEN OXIDE DENSITY; SURFACE OXIDATION;

SILICON NITRIDE;

EID: 0035108171     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1329118     Document Type: Article

References (2)

1. B. E. E. Kastenmeier, P. J. Matsuo, J. J. Beulens, and G. S. Oehrlein, J. Vac. Sci. Technol. A 14, 2802 (1996).
2. B. E. E. Kastenmeier, P. J. Matsuo, G. S. Oehrlein, and J. G. Langan, J. Vac. Sci. Technol. A 16, 2047 (1998).