Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 118-121

  Duboz, Jean Yves ^a,c   De L'Isle, Nadia Briere ^a   Dua, Lydie ^a   Legagneux, Pierre ^a   Mosca, Mauro ^a   Reverchon, Jean Luc ^a   Damilano, Benjamin ^b   Grandjean, Nicolas ^b   Semond, Fabrice ^b   Massies, Jean ^b   Dudek, Richard ^c   Poitras, Daniel ^c   Cassidy, Tom ^c  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CRHEA CNRS   (France)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Dielectric mirror; Gallium nitride; Light emitting diodes; Membrane; Microcavity; Molecular beam epitaxy

Indexed keywords

CAVITY RESONATORS; DIELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ETCHING; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

BRAGG REFLECTOR STOP BAND; MEMBRANE MICROCAVITY; MICROCAVITY LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0037667823     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.118     Document Type: Article

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