Imaging breakdown spots in SiO2 films and MOS devices with a conductive atomic force microscope

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 380-386

  Porti, M ^a   Blum M C ^a,b   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF LAUSANNE   (Switzerland)

Author keywords

Atomic force microscopy; Circuits; Conductive films; Degradation; Dielectric breakdown; Electric breakdown; Electrodes; MOS devices; Scanning electron microscopy; Voltage

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONDUCTIVE FILMS; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; MOS DEVICES; NETWORKS (CIRCUITS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON;

BREAKDOWN PROCESS; BREAKDOWN SPOTS; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT LIMITATION; DIELECTRIC STRENGTHS; METAL ELECTRODES; NANOMETRIC SCALE;

LEAKAGE CURRENTS;

EID: 84949230574     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996667     Document Type: Conference Paper

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