Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 163-167

  Lombardo, S ^a   Crupi, F ^b   Stathis, J H ^c  

^a CNR   (Italy)

^b UNIVERSITY OF MESSINA   (Italy)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Breakdown voltage; Circuit testing; Current measurement; Degradation; Electric breakdown; Electrons; Life estimation; MOSFETs; Softening; Stress

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; GATES (TRANSISTOR); MOS DEVICES; STRESSES;

CIRCUIT TESTING; CONSTANT VOLTAGE STRESS; FOWLER-NORDHEIM STRESS; LIFE ESTIMATION; MOSFETS; PHYSICAL STRUCTURES; SOFTENING; ULTRA THIN GATE OXIDE;

MOSFET DEVICES;

EID: 84949806924     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922896     Document Type: Conference Paper

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