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Diffusion and Defect Data Pt.B: Solid State Phenomena

Volumn 71, Issue , 2000, Pages 51-72

Diffusion and electrical properties of 3d transition-metal impurities in silicon

(1) Kitagawa, H a

a FUKUOKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; ENERGY GAP; IMPURITIES; IRON; POINT DEFECTS; SEMICONDUCTOR GROWTH;

THREE DIMENSIONAL TRANSITION METAL IMPURITIES;

SEMICONDUCTING SILICON;

EID: 0034464151 PISSN: 10120394 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Article

Times cited : (19)

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