Electrical properties of silver impurities and their annealing behaviour in p-type Fz silicon

Journal de Physique III

Volumn 6, Issue 12, 1996, Pages 1691-1696

  Adegboyega, G A ^a   Passari, L ^b   Butturi, M A ^b   Poggi, A ^c   Suzi, E ^c  

^a OBAFEMI AWOLOWO UNIVERSITY   (Nigeria)

^b UNIVERSITY OF FERRARA   (Italy)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; INFRARED SPECTROSCOPY; RAMAN SPECTROSCOPY; SILVER; SUBSTRATES; THERMAL EFFECTS;

DEEP LEVEL TRAPS; DONOR TYPE BEHAVIOR; ISOCHRONAL ANNEALING; MINORITY CARRIER LIFETIME;

SEMICONDUCTING SILICON;

EID: 0030422251     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1996207     Document Type: Article

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