Deep-level transient spectroscopy of Pd-H complexes in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 3, 2000, Pages 1924-1934

  Sachse, J ^a   Weber, J ^a   Lemke, H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007967196     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.1924     Document Type: Article

References (43)

1. H. H. Woodbury and G. W. Ludwig, Phys. Rev. 126, 466 (1962).
2. K. Graff, Metal Impurities in Silicon Device Production (Springer-Verlag, Berlin, 1995).
3. G. D. Watkins, Physica B & C 117B&118B, 9 (1983).
4. H. Zimmermann and H. Ryssel, Appl. Phys. Lett. 58, 499 (1991).
5. J.-U. Sachse, W. Jost, J. Weber, and H. Lemke, Appl. Phys. Lett. 71, 1379 (1997).
6. E. Ö. Sveinbjörnsson and O. Engström, Appl. Phys. Lett. 61, 2323 (1992).
7. E. Ö. Sveinbjörnsson and O. Engström, Phys. Rev. B 52, 4884 (1995).
8. T. Sadoh, H. Nakashima, and T. Tsurushima, J. Appl. Phys. 72, 520 (1992).
9. T. Sadoh, M. Watanabe, H. Nakashima, and T. Tsurushima, J. Appl. Phys. 75, 3978 (1994).
10. W. Jost, J. Weber, and H. Lemke, Semicond. Sci. Technol. 11, 22 (1996).
11. W. Jost, J. Weber, and H. Lemke, Semicond. Sci. Technol. 11, 525 (1996).
12. W. Jost and J. Weber, Phys. Rev. B 54, R11 038 (1996).
13. J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, J. Weber, and H. Lemke, Appl. Phys. Lett. 70, 1584 (1997).
14. J.-U. Sachse, E. Ö. Sveinbjörnsson, N. Yarykin, and J. Weber, Mater. Sci. Eng., B 58, 134 (1999).
15. N. Yarykin, J.-U. Sachse, H. Lemke, and J. Weber, Phys. Rev. B 59, 5551 (1999).
16. P. M. Williams, G. D. Watkins, S. Uftring, and M. Stavola, Phys. Rev. Lett. 70, 3816 (1993).
17. M. Höhne, U. Juda, Y. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, and L. S. Vlasenko, Phys. Rev. B 49, 13 423 (1994).
18. S. J. Uftring, M. Stavola, P. M. Williams, and G. D. Watkins, Phys. Rev. B 51, 9612 (1995).
19. J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, J. Weber, and H. Lemke, Phys. Rev. B 55, 16 176 (1997).
20. J.-U. Sachse, J. Weber, and E. Ö. Sveinbjörnsson, Phys. Rev. B 60, 1474 (1999).
21. S. J. Pearton and E. E. Haller, J. Appl. Phys. 54, 3613 (1983).
22. J.-U. Sachse, J. Weber, and H. Lemke, Mater. Sci. Forum 258-263, 307 (1997).
23. H. Lemke, in Semiconductor Silicon, edited by H. R. Huff, W. Bergholz, and K. Sumino (Electrochemical Society, Pennington, NJ, 1994), p. 695.
24. H. G. Grimmeiss, E. Janzén, B. Skarstam, and A. Lodding, J. Appl. Phys. 51, 6238 (1980).
25. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
26. B. Hamilton, A. R. Peaker, and D. R. Wight, J. Appl. Phys. 50, 6373 (1979).
27. J. A. Davidson and J. H. Evans, Semicond. Sci. Technol. 11, 1704 (1996).
28. J. A. Pals, Solid-State Electron. 17, 1139 (1974).
29. J. W. Chen and A. G. Milnes, Annu. Rev. Mater. Sci. 10, 157 (1980), and references therein.
30. H. Lemke, Phys. Status Solidi A 86, K39 (1984).
31. A. Mirzaev, Sh. Makhamov, and N. A. Tursunov, Fiz. Tekh. Poluprovodn. 22, 1177 (1988) [Sov. Phys. Semicond. 22, 746 (1988)].
32. J. Vicente, J. L. Enríquez, E. Rubio, L. Bailón, and J. Barbolla, J. Electrochem. Soc. 140, 868 (1993).
33. T. Zundel and J. Weber, Phys. Rev. B 39, 13 549 (1989).
34. R. Czaputa, M. Midl, H. Feichtinger, and A. Bauer, Mater. Sci. Forum 38-41, 415 (1989).
35. Zhou Jie, R. Shengyang, H. Hong, G. Weikun, J. Xiujiang, and L. Shuying, Mater. Sci. Forum 10-12, 723 (1986).
36. J. Zhu, N. M. Johnson, and C. Herring, Phys. Rev. B 41, 12 354 (1990).
37. A. L. Endrös, W. Krühler, and J. Grabmaier, Physica B 170, 365 (1991).
38. O. V. Feklisova and N. A. Yarykin, Semicond. Sci. Technol. 12, 742 (1997).
39. W. Stöffler and J. Weber, Mater. Sci. Forum 10-12, 705 (1986).
40. R. Czaputa, Appl. Phys. A: Solids Surf. 49, 431 (1989).
41. A. A. Gill, M. Z. Iqbal, and N. Zafar, Semicond. Sci. Technol. 8, 675 (1993).
42. A. Resende, R. Jones, S. Öberg, and P. R. Briddon, Phys. Rev. B 82, 2111 (1999).
43. R. Jones, A. Resende, S. Öberg, and P. R. Briddon, Mater. Sci. Eng., B 58, 113 (1999).