SiO2Interface Layer Effects on Microwave Loss of High-Resistivity CPW Line

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 1, 1999, Pages 10-12

  Wu, Yunhong ^a   Gamble, Harold S ^a   Armstrong, B Mervyn ^a   Fusco, Vincent F ^a   Carson Stewart, J A ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MICROWAVES; SILICA; SILICON WAFERS; VOLTAGE MEASUREMENT;

MICROWAVE LOSSES;

WAVEGUIDES;

EID: 0032628176     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.752108     Document Type: Article

References (4)

1. Z. R. Hu, V. F. Fusco, Y. Wu, H. S. Gamble, B. M. Armstrong, and J. A. C. Stewart, “Contact effects of HF loss of CPW high resistivity silicon lines,” in 1996 IEEE MTT-S Dig., pp. 299-302
2. A. C. Reyes, S. M. El-Ghazaly, S. Dorn, M. Dydyk, and D. K. Schroder, “Silicon as a microwave substrate,” in 1994 IEEE MTT-S Dig., pp. 1759-1762
3. A. C. Reyes, S. M. El-Ghazaly, S. J. Dorn, M. Dydyk, D. K. Schroder, and H. Patterson, “Coplanar waveguides and microwave inductors on silicon substrates,” IEEE Trans. Microwave TheoryTech., vol. 43, pp. 2061-2022, Sept. 1995
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley Eastern Limited, 1987