Intrinsic gettering of manganese impurity in silicon substrate

Physica Status Solidi (A) Applied Research

Volumn 161, Issue 1, 1997, Pages 231-235

  Adegboyega, G A ^a   Osasona, O ^a   Susi, E ^b  

^a OBAFEMI AWOLOWO UNIVERSITY   (Nigeria)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONDUCTIVITY OF SOLIDS; IMPURITIES; INFRARED SPECTROSCOPY; MANGANESE; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SUBSTRATES;

GETTERING; MINORITY CARRIER LIFETIME MEASUREMENTS;

SILICON WAFERS;

EID: 0031139818     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199705)161:1<231::AID-PSSA231>3.0.CO;2-I     Document Type: Article

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