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Volumn 74, Issue 6, 1999, Pages 806-808

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000565940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123374     Document Type: Article
Times cited : (17)

References (17)
  • 1
    • 0005823923 scopus 로고    scopus 로고
    • Ultrathin dielectrics in silicon microelectronics - An overview
    • edited by E. Garfunkel, E. P. Gusev, and A. Vul' Kluwer Academic, Dordrecht
    • L. C. Feldman, E. P. Gusev, and E. Garfunkel, "Ultrathin dielectrics in silicon microelectronics - an overview" in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Vul' (Kluwer Academic, Dordrecht, 1998), p. 1.
    • (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices , pp. 1
    • Feldman, L.C.1    Gusev, E.P.2    Garfunkel, E.3
  • 2
    • 0039978736 scopus 로고    scopus 로고
    • 2 Films
    • edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms The Electrochemical Society, Pennington, NJ
    • 2, Interface, edited by H. Z. Massoud, E. H. Poindexter, and C. R. Helms (The Electrochemical Society, Pennington, NJ, 1996), p. 15.
    • (1996) 2, Interface , pp. 15
    • Fukuda, H.1    Endoh, T.2    Nomura, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.