Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications

Thin Solid Films

Volumn 386, Issue 1, 2001, Pages 111-116

  Ikeda, Akihiro ^a   Abd Elnaby, M ^b   Hattori, Reiji ^a   Kuroki, Yukinori ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b TANTA UNIVERSITY   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FLASH MEMORY; INTERFACES (MATERIALS); OPTICAL CORRELATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; STRESS ANALYSIS; SUBSTRATES; THERMOOXIDATION; THIN FILMS;

CAPACITANCE-VOLTAGE THEORY; NITROGEN PLASMAS; SILICON OXINITRIDED THIN FILMS;

SEMICONDUCTING FILMS;

EID: 0342592264     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01888-5     Document Type: Article

References (20)

1. Hori T., Iwasaki H. IEEE Electron. Device Lett. 10:1989;64.
2. Itoh T., Nakamura T., Ishikawa H. IEEE Trans. Electron. Device. 29:1982;498.
3. Okamoto Y., Kimura S., Oka F., Tsuchiya S., Ikoma H. J. Appl. Phys. 83:1998;7685.
4. Salgado T.D.M., Stedile F.C., Krug C., Baumvol I.J.R., Radtke C. Nucl. Instrum. Methods Phys. Res. B. 148:(1-4):1999;252.
5. Ikeda A., Abd Elnaby M., Fujimura T., Hattori R., Kuroki Y. Mastorakis N. Advances in Physics, Electronics and Signal Processing Applications, Electrical and Computer Engineering International Reference Book Series. 2000;178 World Scientific and Engineering Society Press, Athens.
6. Uchiyama A., Fukuda H., Hayashi T., Iwabuchi T., Ohno S. Proceedings of IEEE Int. Electron. Devices Meeting. 1990;425.
7. Arakawa T., Matsumoto R., Kita A. Jpn. J. Appl. Phys. 35:1996;1491.
8. Kapila D., Hattangady S., Douglas M., Kraft R., Gribelyuk M. J. Electrochim. Soc. 146:1999;1111.
9. Paskaleva A., Atanassova E. Solid State Electron. 42:1998;777.
10. Dunn G.J. J. Appl. Phys. 65:1989;4879.
11. Kuhn M. Solid State Electron. 13:1970;873.
12. Sah C.T. Solid State Electron. 33:1990;147.
13. Ma Y., Lucovsky G. J. Vac. Sci. Technol. B. 12:1994;2504.
14. Fischetti M.V. J. Appl. Phys. 52:1984;575.
15. Vasquez R.P., Madhukar A. Appl. Phys. Lett. 47:1985;998.
16. Landheer D., Tao Y., Xu D.X., Sproule G.I. J. Appl. Phys. 78:1995;1818.
17. Krisch K.S., Sodini C.G. J. Appl. Phys. 76:1994;2284.
18. Manzini S., Volonte F. J. Appl. Phys. 58:1985;4300.
19. Holland S., Hu C. J. Electrochem. Soc. 133:1986;1705.
20. Lu Z.H., Hussey R.J., Graham M.J., Gao R., Tay S.P. J. Vac. Sci. Technol. B. 14:1996;2882.