Characteristics of GaN epilayer grown on Al 2 O 3 with AlN buffer layer by molecular beam epitaxy

Current Applied Physics

Volumn 3, Issue 4, 2003, Pages 385-388

  Jeon, H C ^a   Lee, H S ^a   Si, S M ^a   Jeong, Y S ^a   Na, J H ^a   Park, Y S ^a   Kang, T W ^a   Oh, Jae Eung ^b  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

AlN buffers; GaN

Indexed keywords

EID: 0037410593     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1567-1739(02)00143-8     Document Type: Article

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