Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 304-308

  Amimer, K ^a   Georgakilas, A ^a   Androulidaki, M ^a   Tsagaraki, K ^a   Pavelescu, M ^a   Mikroulis, S ^a   Constantinidis, G ^a   Arbiol, J ^b   Peiro, F ^b   Cornet, A ^b   Calamiotou, M ^c   Kuzmik, J ^d   Davydov, V Y ^e  

^a UNIVERSITY OF CRETE   (Greece)

^b UNIVERSITY OF BARCELONA   (Spain)

^c UNIVERSITY OF ATHENS   (Greece)

^d INSTITUTE OF CHEMISTRY   (Slovakia)

^e IOFFE INSTITUTE   (Russian Federation)

Author keywords

Defects; GaN thin films; Radio frequency plasma assisted molecular beam epitaxy; Strain; Surface morphology

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; CRYSTAL DEFECTS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PLASMA SOURCES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STACKING FAULTS; STOICHIOMETRY; STRAIN; SURFACE ROUGHNESS; THIN FILMS;

PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0035932199     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00646-2     Document Type: Article

References (9)