Electronic states in modulation doped p-AlGaN/GaN superlattices

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 4032-4038

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Osinsky, A V ^b   Norris, P E ^b   Pearton, S J ^c   Van Hove, J ^d   Wowchack, A M ^d   Chow, P P ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Corning Applied Technologies ^*  (United States)

^c University of Florida   (United States)

^d SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886104     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1405819     Document Type: Article

References (26)

1. G. Popovici and H. Morkoc, Growth and Doping Defects in III-Nitrides, in GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach, The Netherlands, 1999), pp. 93-172.
2. P. Kozodoy, Y. P. Smorchkova, M. Hansen, H. Xing, S. P. DenBaars, U. K. Mishra, A. W. Saxler, R. Perrin, and W. C. Mitchell, Appl. Phys. Lett. 75, 2444 (1999).
3. P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 74, 3681 (1999).
4. I. D. Goepfert, E. F. Schubert, A. Osinsky, P. E. Morris, and N. N. Faleev, J. Appl. Phys. 18, 2030 (2000).
5. S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci. Eng., R. 30. 55 (2000).
6. J. M. Van Hove, P. P. Chow, R. Hickman, A. M. Wowchak, J. J. Klaassen, and C. J. Polley, Mater. Res. Soc. Symp. Proc. 449, 1227 (1997).
7. L. S. Berman and A. A. Lebedev, Capacitance Spectroscopy of Deep Defects in Semiconductors (Nauka, Leningrad, 1981) (in Russian).
8. R. E. Kremer, M. C. Arikan, J. C. Abele, and J. Blakemore, J. Appl. Phys. 62, 2424 (1987).
9. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and J. M. Redwing, Solid-State Electron. 42, 831 (1998).
10. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
11. H. K. Kuiken and C. Van Opdorp, J. Appl. Phys. 57, 2077 (1985).
12. A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidkii, J. M. Redwing, M. Shin, M. Skowronski, and D. W. Greve, Solid-State Electron. 42, 637 (1998).
13. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. Shin, M. Skowronski, and D. W. Greve, J. Appl. Phys. 84, 870 (1998).
14. A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, A. V. Govorkov, and B. V. Pushnyi, Solid-Slate Electron. 42, 1959 (1998).
15. A. K. Rice and K. J. Malioy, J. Appl. Phys. 89, 2816 (2001).
16. H. Kroemer, W.-Y. Chien, J. S. Harris, and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980).
17. D. V. Lang, M. B. Panish, F. Capasso, J. Allam, R. A. Hamm, A. M. Sergent, and W. T. Tsang, Appl. Phys. Lett. 50, 736 (1987).
18. D. V. Lang, A. M. Sergent, M. B. Panish, and H. Temkin, Appl. Phys. Lett. 49, 812 (1986).
19. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoc, Appl. Phys. Lett. 68, 2541 (1996).
20. M. Katsugawara, S. Sota M. Komori, C. Anbe, T. Takeuchi, H. Sakai, H. Amano, and I. Akasaki, in Proceedings of the II International Conference on Nitride Semiconductors, Tokushima, Japan, 1997 (ICNS'97), edited by I. Akasaki and K. Onabe (Elsevier Science, Oxford, 1997), pp. 62 and 63.
21. A. Y. Polyakov. N. B. Smirnov, A. V. Govorkov, M. G. Mil'vidskii, A. S. Usikov, B. V. Pushnyi, and W. V. Lundin, Solid-State Electron. 43, 1929 (1999).
22. W. Gotz, N. M. Johnson, and D. P. Bour, Appl. Phys. Lett. 68, 3470 (1995).
23. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. S. Usikov, N. M. Shmidt, and W. V. Lundin, Solid-State Electron. 45, 255 (2001).
24. A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. E. Nikolaev, I. P. Nikitina, and V. A. Dmitriev, Solid-State Electron. 45, 261 (2001).
25. J. W. Huang, T. F. Kuech, H. Lu, and I. Bhat, Appl. Phys. Lett. 69, 2392 (1996).
26. D. Seghier and H. P. Gislason, J. Appl. Phys. 88, 6483 (2000).