Iron and manganese doped zinc-blende GaN

Journal of Electronic Materials

Volumn 29, Issue 9, 2000, Pages 1067-1073

  Fong, C Y ^a   Gubanov, V A ^b   Boekema, C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRONIC DENSITY OF STATES; IRON; MAGNETIC MOMENTS; MANGANESE; POSITIVE IONS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034273792     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0266-8     Document Type: Article

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