High-quality GaN epilayer grown by newly designed horizontal counter-flow MOCVD reactor

Journal of Crystal Growth

Volumn 182, Issue 1-2, 1997, Pages 11-16

  Lee, Cheul Ro ^a   Son, Sung Jin ^b   Lee, In Hwan ^c   Leem, Jae Young ^a   Noh, Sam Kyu ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b OPTEL Semiconductor Corporation   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; MORPHOLOGY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; SURFACE MORPHOLOGY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0031334842     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00316-3     Document Type: Article

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