In-situ monitoring system of the position and temperature at the crystal-solution interface

Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 125-131

  Sazaki, Gen ^a,b   Azuma, Yukinaga ^a   Miyashita, Satoru ^c   Usami, Noritaka ^a   Ujihara, Toru ^a   Fujiwara, Kozo ^a   Murakami, Yoshihiro ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TOYAMA   (Japan)

Author keywords

A1. In situ monitoring; A1. Interfaces; A2. Growth from high temperature solutions; B1. Germanium silicon alloys

Indexed keywords

CAMERAS; CHARGE COUPLED DEVICES; GERMANIUM ALLOYS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LIGHT REFLECTION; OPTICAL BEAM SPLITTERS; OPTICAL RESOLVING POWER; SINGLE CRYSTALS; SOLUTIONS; TEMPERATURE DISTRIBUTION;

IN-SITU MONITORING SYSTEMS;

CRYSTAL GROWTH;

EID: 0036499243     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02171-6     Document Type: Article

References (10)