SixGe1-x single crystals grown by the RF-heated float zone technique

Journal of Crystal Growth

Volumn 163, Issue 3, 1996, Pages 243-248

  Wollweber, J ^a   Schulz, D ^a   Schroder W ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; COMPOSITION; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ALLOYS; SINGLE CRYSTALS;

FLOAT ZONE TECHNIQUE; GROWTH RATE; SILICON GERMANIUM ALLOYS; SILICON SEED;

CRYSTAL GROWTH FROM MELT;

EID: 0030167801     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00968-X     Document Type: Article

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