SCOPUS 정보 검색 플랫폼

Volumn 226, Issue 4, 2001, Pages 437-442

Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)

(6) Azhdarov, G Kh a Kucukomeroglu T b Varilci, A b Altunbas M b Kobya, A b Azhdarov, P G a

a INSTITUTE OF PHYSICS (Azerbaijan)

b KARADENIZ TECHNICAL UNIVERSITY (Turkey)

Author keywords

A1. Segregation; A1. Supply of solute elements; A2. Double crucible technique; A2. Growth from melt; A2. Single crystal growth; B1. Germanium silicon alloys

Indexed keywords

CRYSTAL STRUCTURE; MATHEMATICAL MODELS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GERMANIUM COMPOUNDS; SINGLE CRYSTALS;

DOUBLE CRUCIBLE TECHNIQUE;

CRYSTAL GROWTH FROM MELT;

EID: 0035427029 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01270-2 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.