Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Semiconductor Science and Technology

Volumn 16, Issue 8, 2001, Pages 699-703

  Usami, N ^a   Azuma, Y ^a   Ujihara, T ^a   Sazaki, G ^a   Nakajima, K ^a   Yakabe, Y ^b   Kondo, T ^b   Kawaguchi, K ^c   Koh, S ^c   Shiraki, Y ^c   Zhang, B P ^d   Segawa, Y ^d   Kodama, S ^e  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^e FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZONE MELTING;

LATTICE MISMATCH; SILICON GERMANIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 17944366193     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/8/311     Document Type: Article

References (15)