The critical charge density in high voltage 4H-SiC thyristors

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 699-704

  Levinshtein, Michael E ^a   Ivanov, Pavel A ^a   Mnatsakanov, Tigran T ^b   Yurkov, Sergey N ^b   Agarwal, Anant K ^c   Palmour, John W ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Critical charge; Silicon carbide; Switch on; Thyristor

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; SILICON CARBIDE; SUBSTRATES; SWITCHING;

CRITICAL CHARGE DENSITY;

THYRISTORS;

EID: 0037397150     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00325-8     Document Type: Article

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