`Classical' current-voltage characteristics of 4H-SiC p+-n junction diodes

Semiconductor Science and Technology

Volumn 15, Issue 9, 2000, Pages 908-910

  Ivanov, P A ^a   Levinshtein, M E ^a   Palmour, J W ^b   Rumyantsev, S L ^a   Singh, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMOANALYSIS;

DIFUSSION CURRENTS; RECOMBINATION CURRENTS;

SEMICONDUCTOR DIODES;

EID: 0034273331     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/9/306     Document Type: Article

References (13)

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