Characterization of 4H-SiC gate turn-off thyristor

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 347-352

  Cao, Lihui ^a   Li, Binghui ^a   Zhao, Jian H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; AVALANCHE DIODES; CARRIER CONCENTRATION; CARRIER MOBILITY; CURRENT DENSITY; ELECTRIC CURRENT CONTROL; ELECTRIC POTENTIAL; ELECTRONS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SWITCHING CIRCUITS; TEMPERATURE;

BLOCKING VOLTAGE; CONTROLLABLE CURRENT; ELECTRON LIFETIME;

THYRISTORS;

EID: 0034140679     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00241-5     Document Type: Article

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