Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2155-2159

  Ivanov, Pavel A ^a   Levinshtein, Michael E ^a   Rumyantsev, Sergey L ^a   Agarwal, Anant K ^b   Palmour, John W ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOSFET DEVICES; SILICON CARBIDE; TRANSIENTS;

SWITCHING FREQUENCY; TURN-OFF TIME; TURN-ON TIME;

THYRISTORS;

EID: 0034497373     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00182-9     Document Type: Article

References (11)

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2. Agarwal AK, Ivanov PA, Levinshtein ME, Palmour JW, Rumyantsev SL, Shur MS. Turn-off performance of a 2.6 kV 4H-SiC asymmetrical GTO thyristor. Abstracts of 3rd European Conference on Silicon Carbide and Related Material, ECSCRM 2000, Sept 3-7, Klaster Banz, Germany p. 213.
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