Steady state current-voltage characteristics of 4H-SiC thyristors at high and superhigh current densities

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1498-1499

  Levinshtein, M E ^a   Palmour, J W ^b   Rumyantsev, S L ^a   Singh, R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001452109     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/029     Document Type: Article

References (8)

1. Palmour J W, Allen S T and Waltz D G 1995 Technical Digest, Int. Conf. on SiC and Related Materials (ICSRM-95, Kyoto) pp 319-20
2. Andreev A N, Strel'chuk A M, Savkina N S, Snegov F M and Chelnokov V E 1995 Semiconductors 29 561
3. Xie K, Zhao J H, Flemish J R, Burke T, Buchvald W R, Lorenzo G and Singh H 1996 IEEE Electron Device Lett. 17 142
4. Levinshtein M E, Palmour J W, Rumyantsev S L and Singh R 1996 Summaries of 23rd Int. Symp. on Compound Semiconductors (St Petersburg) p 52
5. Somos L and Piccone D E 1970 IEEE Trans. Electron Devices 17 680
6. Levinshtein M E, Palmour J W, Rumyantsev S L and Singh R 1997 IEEE Trans. Electron Devices submitted
7. Anikin M M, Ivanov P A, Lebedev A A, Pytko S N, Strel'chuk A M and Syrkin A L 1992 Semiconductor Interfaces and Microstructures ed Z C Feng (Singapore: World Scientific) pp 280-311
8. Strel'chuk A M 1995 Semiconductors 29 614-23