Interfacial stability between zirconium oxide thin films and silicon

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 427-432

  Zhang, Ninglin ^a   Song, Zhitang ^a   Xing, Su ^a   Shen, Qinwo ^a   Lin, Chenglu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Gate dielectric; High K; Interface; ZrO2

Indexed keywords

RAPID THERMAL ANNEALING; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

GATE DIELECTRICS;

THIN FILMS;

EID: 0037391730     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00905-X     Document Type: Conference Paper

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