High-vacuum electron-beam co-evaporation of Si nanocrystals embedded in Al 2 O 3 matrix

Applied Surface Science

Volumn 191, Issue 1-4, 2002, Pages 171-175

  Wan, Q ^a,b   Zhang, N L ^a   Xie, X Y ^a   Wang, T H ^b   Lin, C L ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Al 2 O 3 matrix; Electron beam co evaporation; Silicon nanocrystals

Indexed keywords

ALUMINA; ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON GUNS; EVAPORATION; QUANTUM THEORY; RESONANT TUNNELING; SEMICONDUCTING SILICON; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0037123568     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00173-3     Document Type: Article

References (18)