Effect of low-temperature-grown GaN intermediate layer on InN growth by plasma-assisted MBE

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 360-363

  Higashiwaki, M ^a   Matsui, T ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; GALLIUM NITRIDE; HALL MOBILITY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS;

INTERMEDIATE LAYERS; LOW-TEMPERATURE GROWN; LOW-TEMPERATURE-GROWN GAN; OPTIMUM CONDITIONS; PLASMA ASSISTED MBE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES;

INDIUM COMPOUNDS;

EID: 84875106248     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390063     Document Type: Conference Paper

References (9)

1. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
2. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, and P. P. Ruden, J. Appl. Phys. 85, 916 (1999).
3. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
4. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, J. Appl. Phys. 85, 7682 (1999).
5. V. V. Mamutin, V. A. Vekshin, V. Yu. Davydov, V. V. Ratnikov, T. V. Shubina, S. V. Ivanov, P. S. Kopev, M. Karlsteen, U. Söderwall, and M. Willander, phys. stat. sol. (a) 176, 247 (1999).
6. Y. Saito, N. Teraguchi, A. Suzuki, T. Araki, and Y. Nanishi, Jpn. J. Appl. Phys. 40, L91 (2001).
7. H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, Appl. Phys. Lett. 79, 1489 (2001).
8. A. G. Bhuiyan, A. Yamamoto, A. Hashimoto, and Y. Ito, J. Cryst. Growth 236, 59 (2002).
9. M. Higashiwaki and T. Matsui, Jpn. J. Appl. Phys. 41, L540 (2002).