Internal efficiency of semiconductor lasers with a quantum-confined active region

IEEE Journal of Quantum Electronics

Volumn 39, Issue 3, 2003, Pages 404-418

  Asryan, Levon V ^a,b   Luryi, Serge ^a   Suris, Robert A ^b  

^a STONY BROOK UNIVERSITY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Quantum dots (QDs); Quantum wells (QWs); Quantum wires (QWRs); Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; HETEROJUNCTIONS; INTERPOLATION; QUANTUM EFFICIENCY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

LIGHT-CURRENT CHARACTERISTICS (LCC);

QUANTUM WELL LASERS;

EID: 0037339354     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.808171     Document Type: Article

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