Revisions to "Transport solution for SCH QW laser diodes"

IEEE Journal of Quantum Electronics

Volumn 34, Issue 10, 1998, Pages 1886-1889

  Taylor, G W ^a   Jin, Shao ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS;

ELECTRICAL CONFINEMENT FACTOR; SEPARATE CONFINEMENT HETEROSTRUCTURE QUANTUM WELL (SCH QW) LASERS;

QUANTUM WELL LASERS;

EID: 0032186577     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.720224     Document Type: Article

References (3)

1. G. W. Taylor and P. R. Claisse, "Transport solutions for the SCH QW laser diode," IEEE J. Quantum Electron., vol. 31, pp. 2133-2141, Dec. 1995
2. W. Freude, "Transport solutions for the SCH QW laser diode: Comment," IEEE J. Quantum Electron., vol. 32, pp. 2173-2175, Dec. 1996.
3. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, "High speed quantum well lasers and carrier transport effects," IEEE J. Quantum Electron., vol. 28, pp. 1990-2008, Oct. 1992.