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Volumn 93, Issue 3, 2003, Pages 1354-1362

Spatially resolved spectroscopic strain measurements on high-power laser diode bars

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTROLUMINESCENCE; HIGH POWER LASERS; PHONONS; PHOTOCURRENTS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SOLDERING; STRAIN MEASUREMENT; THERMAL EXPANSION;

EID: 0037321785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533091     Document Type: Article
Times cited : (37)

References (23)
  • 1
    • 0013288484 scopus 로고    scopus 로고
    • High-power diode lasers, fundamentals, technology, applications
    • edited by R. Diehl (Springer-Verlag, Berlin)
    • High-Power Diode Lasers, Fundamentals, Technology, Applications, Vol. 78 of Topics in Applied Physics, edited by R. Diehl (Springer-Verlag, Berlin, 2000), p. 380.
    • (2000) Topics in Applied Physics , vol.78 , pp. 380
  • 19
    • 0013286181 scopus 로고    scopus 로고
    • note
    • 1lh→ 1e/d(Δa/a) = - 12.4 eV.
  • 20
    • 0013313611 scopus 로고    scopus 로고
    • note
    • 1lh→ 1e/d(Δa/a) = - 12.3 eV. At room temperature the line-shape fit of the first derivative of the PC spectrum is influenced by both the heavy-and light-hole transitions at the low-and high-energy side of the peak, respectively.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.