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Applied Physics Letters

Volumn 73, Issue 26, 1998, Pages 3908-3910

Direct spectroscopic measurement of mounting-induced strain in high-power optoelectronic devices

(8) Tomm, J W a Muller R a Barwolff A a Elsaesser, T a Lorenzen, D b Daiminger, F X b Gerhardt, A c Donecker, J c

a MAX BORN INSTITUT (Germany)

b JENOPTIK Laserdiode GmbH (Germany)

c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STRAIN; THERMAL EXPANSION;

DEFINED MOUNTING INDUCED STRAIN; FOURIER TRANSFORM PHOTOCURRENT SPECTROSCOPY; QUANTUM CONFINED OPTICAL TRANSITIONS;

SEMICONDUCTOR LASERS;

EID: 0032576493 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122932 Document Type: Article

Times cited : (34)

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