Sulphur passivation of dry-etched AlGaAs laser facets

Electronics Letters

Volumn 35, Issue 6, 1999, Pages 506-508

  Collot, P ^a   Delalande, S ^a   Olivier, J ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; MIRRORS; PASSIVATION; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SULFUR;

CHEMICALLY ASSISTED ION BEAM ETCHING; OPTICAL MIRROR DAMAGE; SULPHUR TREATMENT;

SEMICONDUCTOR LASERS;

EID: 0033101339     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990326     Document Type: Article

References (9)

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